STL16N65M5 datasheet(5/15 Pages) STMICROELECTRONICS

Part #	STL16N65M5

Description	N-channel 650 V, 0.270 ohm, 12 A PowerFLAT 8x8 HV

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 15 page

STL16N65M5

Electrical characteristics

Doc ID 17448 Rev 5

5/15

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td (v)

tr (v)

tf (i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

VDD = 400 V, ID = 8 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 17),

(see Figure 20)

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 12 A, VGS = 0

1.5

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 12 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 17)

300

3.5

µC

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 12 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 17)

350

µC

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