STM32F215RG datasheet(82/175 Pages) STMICROELECTRONICS

82 / 175 page

Electrical characteristics

STM32F21xxx

82/175

DocID17050 Rev 9

Table 23. Typical and maximum current consumptions in Standby mode

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

TA = 25 °C

TA = 85 °C TA = 105 °C

VDD =

1.8 V

VDD=

2.4 V

VDD =

3.3 V

VDD = 3.6 V

IDD_STBY

Supply current

in Standby

mode

Backup SRAM ON, low-speed

oscillator and RTC ON

3.0

3.4

4.0

15.1

25.8

µA

Backup SRAM OFF, low-

speed oscillator and RTC ON

2.4

2.7

3.3

12.4

20.5

Backup SRAM ON, RTC OFF

2.4

2.6

3.0

12.5

24.8

Backup SRAM OFF, RTC

OFF

1.7

1.9

2.2

9.8

19.2

1. Based on characterization, not tested in production.

Table 24. Typical and maximum current consumptions in VBAT mode

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

TA = 25 °C

TA = 85 °C

TA =

105 °C

VDD =

1.8 V

VDD=

2.4 V

VDD =

3.3 V

VDD = 3.6 V

IDD_VBAT

Backup

domain supply

current

Backup SRAM ON, low-speed

oscillator and RTC ON

1.29

1.42

1.68

µA

Backup SRAM OFF, low-speed

oscillator and RTC ON

0.62

0.73

0.96

Backup SRAM ON, RTC OFF

0.79

0.81

0.86

Backup SRAM OFF, RTC OFF

0.10

1. Based on characterization, not tested in production.

STM32F215RG Datasheet(PDF) 82 Page - STMicroelectronics

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