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STM32F217VG Datasheet(PDF) 68 Page - STMicroelectronics

Part # STM32F217VG
Description  ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/1284KB RAM
PDF  173 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F217VG Datasheet(HTML) 68 Page - STMicroelectronics

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Electrical characteristics
STM32F21xxx
68/173
Doc ID 17050 Rev 8
5.3.6
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 17: Current consumption
measurement scheme.
All Run mode current consumption measurements given in this section are performed using
CoreMark code.
VBOR1
Brownout level 1
threshold
Falling edge
2.13
2.19
2.24
V
Rising edge
2.23
2.29
2.33
V
VBOR2
Brownout level 2
threshold
Falling edge
2.44
2.50
2.56
V
Rising edge
2.53
2.59
2.63
V
VBOR3
Brownout level 3
threshold
Falling edge
2.75
2.83
2.88
V
Rising edge
2.85
2.92
2.97
VBORhyst
(2)
BOR hysteresis
-
100
-
mV
TRSTTEMPO
(2)(3) Reset temporization
0.5
1.5
3.0
ms
IRUSH
(2)
InRush current on
voltage regulator
power-on (POR or
wakeup from Standby)
-
160
200
mA
ERUSH
(2)
InRush energy on
voltage regulator
power-on (POR or
wakeup from Standby)
VDD = 1.8 V, TA = 105 °C,
IRUSH = 171 mA for 31 µs
--
5.4
µC
1.
The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
2.
Guaranteed by design, not tested in production.
3.
The reset temporization is measured from the power-on (POR reset or wakeup from VBAT) to the instant
when first instruction is read by the user application code.
Table 16.
Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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