BAS2 datasheet(4/10 Pages) NXP

4 / 10 page

2003 Mar 20

NXP Semiconductors

Product data sheet

General purpose diodes

BAS19; BAS20; BAS21

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

THERMAL CHARACTERISTICS

Note

Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

forward voltage

see Fig.3

IF = 100 mA

IF = 200 mA

1.25

reverse current

see Fig.5

BAS19

VR = 100 V

100

VR = 100 V; Tj = 150 °C

100

µA

BAS20

VR = 150 V

100

VR = 150 V; Tj = 150 °C

100

µA

BAS21

VR = 200 V

100

VR = 200 V; Tj = 150 °C

100

µA

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

trr

reverse recovery time

when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω; measured at

IR = 3 mA; see Fig.8

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

330

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

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