BAV99S datasheet(4/14 Pages) NXP

4 / 14 page

BAV99_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 8 — 18 November 2010

4 of 14

NXP Semiconductors

BAV99 series

High-speed switching diodes

Thermal characteristics

[1]

Single diode loaded.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

Soldering points at pins 2, 3, 5 and 6.

Characteristics

[1]

When switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR =1mA.

[2]

When switched from IF =10mA; tr =20ns.

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1][2]

BAV99

500

K/W

BAV99W

625

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

BAV99

360

K/W

BAV99S

[3] -

260

K/W

BAV99W

300

K/W

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

forward voltage

IF = 1 mA

715

IF = 10 mA

855

IF = 50 mA

--1

IF = 150 mA

--1.25

reverse current

VR = 25 V

--30

VR = 80 V

--0.5

μA

VR =25V; Tj =150 °C

--30

μA

VR =80V; Tj =150 °C

--50

μA

diode capacitance

f = 1 MHz; VR = 0 V

--1.5

trr

reverse recovery time

[1] --4

VFR

forward recovery voltage

[2] --1.75

BAV99S Datasheet(PDF) 4 Page - NXP Semiconductors

BAV99S Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL