BAW56T datasheet(1/15 Pages) NXP

Part #	BAW56T

Description	High-speed switching diodes

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1 / 15 page

1.

Product proﬁle

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)

plastic packages.

1.2 Features

1.3 Applications

I High-speed switching

I General-purpose switching

1.4 Quick reference data

[1]

When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

BAV756S; BAW56 series

High-speed switching diodes

Rev. 05 — 26 November 2007

Product data sheet

Table 1.

Product overview

Type number

Package

conﬁguration

Conﬁguration

NXP

JEITA

JEDEC

BAV756S

SOT363

SC-88

-

very small

quadruple common

anode/common cathode

BAW56

SOT23

-

TO-236AB small

dual common anode

BAW56M

SOT883

SC-101

-

leadless ultra

small

dual common anode

BAW56S

SOT363

SC-88

-

very small

quadruple common

anode/common anode

BAW56T

SOT416

SC-75

-

ultra small

dual common anode

BAW56W

SOT323

SC-70

-

very small

dual common anode

I High switching speed: trr ≤ 4ns

I Low capacitance: Cd ≤ 2pF

I Low leakage current

I Reverse voltage: VR ≤ 90 V

I Small SMD plastic packages

Table 2.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

IR

reverse current

VR = 80 V

-

0.5

µA

VR

reverse voltage

-

90

V

trr

reverse recovery time

[1] --4

ns

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