LF155, LF156, LF355, LF356, LF357

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SNOSBH0C – MAY 2000 – REVISED MARCH 2013

LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers

Check for Samples: LF155, LF156, LF355, LF356, LF357

1

FEATURES

DESCRIPTION

These are the first monolithic JFET input operational

23

Advantages

amplifiers to incorporate well matched, high voltage

•

Replace Expensive Hybrid and Module FET Op

JFETs on the same chip with standard bipolar

Amps

transistors ( BI-FET™ Technology). These amplifiers

•

Rugged JFETs Allow Blow-Out Free Handling

feature low input bias and offset currents/low offset

voltage and offset voltage drift, coupled with offset

Compared with MOSFET Input Devices

adjust which does not degrade drift or common-mode

•

Excellent for Low Noise Applications Using

rejection. The devices are also designed for high slew

Either High or Low Source Impedance—Very

rate, wide bandwidth, extremely fast settling time, low

Low 1/f Corner

voltage and current noise and a low 1/f noise corner.

•

Offset Adjust Does Not Degrade Drift or

Common-Mode Rejection as in Most

Common Features

Monolithic Amplifiers

•

Low Input Bias Current:

30pA

•

New Output Stage Allows Use of Large

•

Low Input Offset Current:

3pA

Capacitive Loads (5,000 pF) without Stability

•

High Input Impedance:

Ω

Problems

•

Low Input Noise Current:

0.01 pA/

√Hz

•

Internal Compensation and Large Differential

•

High Common-Mode Rejection Ratio:

100 dB

Input Voltage Capability

•

Large DC Voltage Gain:

106 dB

APPLICATIONS

Table 1. Uncommon Features

•

Precision High Speed Integrators

LF155/

LF156/

LF257/

Units

LF355

LF256/

LF357

•

Fast D/A and A/D Converters

LF356

•

High Impedance Buffers

Extremely fast

4

1.5

1.5

μs

settling time to 0.01%

•

Wideband, Low Noise, Low Drift Amplifiers

Fast slew rate

5

12

50

V/µs

•

Logarithmic Amplifiers

Wide gain bandwidth

2.5

5

20

MHz

•

Photocell Amplifiers

Low input noise

20

12

12

nV /

√Hz

•

Sample and Hold Circuits

voltage

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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

BI-FET is a trademark of Texas Instruments.

3

All other trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Copyright © 2000–2013, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.