LM2936 datasheet(2/28 Pages) TI

2 / 28 page

LM2936

SNOSC48N – JUNE 2000 – REVISED MARCH 2013

www.ti.com

Connection Diagrams

Figure 1. PFM

Figure 2. SOT-223

Top View

See Package Number NDP0003B

See Package Number DCY0004A

Figure 3. 8-Pin SOIC (D)

Figure 4. 8-Pin SOIC (D)

Top View

See Package Number D0008A

Figure 5. TO-92

Figure 6. 8-Pin VSSOP (DGK)

Bottom View

Top View

See Package Number LP0003A

See Package Number DGK0008A

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Input Voltage (Survival)

+60V,

−50V

ESD Susceptibility (3)

2000V

Power Dissipation (4)

Internally limited

Junction Temperature (TJmax)

150°C

Storage Temperature Range

−65°C to +150°C

Lead Temperature (Soldering, 10 sec.)

260°C

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not

apply when operating the device beyond its specified operating ratings.

(2)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.

(3)

Human body model, 100 pF discharge through a 1.5 k

Ω resistor.

(4)

The maximum power dissipation is a function of TJmax, θJA, and TA. The maximum allowable power dissipation at any ambient

temperature is PD = (TJmax − TA)/θJA. If this dissipation is exceeded, the die temperature will rise above 150°C and the LM2936 will go

into thermal shutdown.

Submit Documentation Feedback

Product Folder Links: LM2936

LM2936 Datasheet(PDF) 2 Page - Texas Instruments

LM2936 Datasheet(HTML) 2 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28

Datasheet Download

Link URL