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CWDM3011N Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part # CWDM3011N
Description  SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET
PDF  3 Pages
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Manufacturer  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CWDM3011N Datasheet(HTML) 1 Page - Central Semiconductor Corp

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CWDM3011N
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CWDM3011N is
a high current silicon N-Channel enhancement-mode
MOSFET designed for high speed pulsed amplifier
and driver applications. This energy efficient MOSFET
offers beneficially low rDS(ON), low gate charge, and
low threshold voltage.
MARKING CODE: C3011N
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
20
V
Continuous Drain Current (Steady State)
ID
11
A
Maximum Pulsed Drain Current, tp=10μs
IDM
50
A
Power Dissipation
PD
2.5
W
Operating and Storage Junction Temperature
TJ, Tstg
-55 to +150
°C
Thermal Resistance
ΘJA
50
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IGSSF, IGSSR VGS=20V, VDS=0
100
nA
IDSS
VDS=30V, VGS=0
1.0
μA
BVDSS
VGS=0, ID=250μA
30
V
VGS(th)
VGS=VDS, ID=250μA
1.0
1.8
3.0
V
VSD
VGS=0, IS=2.6A
1.2
V
rDS(ON)
VGS=10V, ID=11A
14
20
mΩ
rDS(ON)
VGS=4.5V, ID=9.0A
18
30
mΩ
Crss
VDS=15V, VGS=0, f=1.0MHz
100
pF
Ciss
VDS=15V, VGS=0, f=1.0MHz
860
pF
Coss
VDS=15V, VGS=0, f=1.0MHz
120
pF
Qg(tot)
VDD=15V, VGS=5.0V, ID=10A
6.3
nC
Qgs
VDD=15V, VGS=5.0V, ID=10A
2.0
nC
Qgd
VDD=15V, VGS=5.0V, ID=10A
2.3
nC
ton
VDD=15V, VGS=10V, ID=10A
20
ns
toff
RG=0.3Ω
43
ns
FEATURES:
• Low rDS(ON)
• High current
• Low gate charge
APPLICATIONS:
• Load/Power switches
• DC-DC converter circuits
• Power management
SOIC-8 CASE
R1 (13-August 2013)
www.centr a lsemi.com


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