BFQ540 datasheet(2/8 Pages) PHILIPS

2 / 8 page

NXP Semiconductors

Product speciﬁcation

NPN wideband transistor

BFQ540

FEATURES

• High gain

• High output voltage

• Low noise

• Gold metallization ensures

excellent reliability

• Low thermal resistance.

APPLICATIONS

• VHF, UHF and CATV amplifiers.

DESCRIPTION

NPN wideband transistor in a SOT89

plastic package.

PINNING

DESCRIPTION

emitter

collector

base

Fig.1 SOT89.

Marking code: N4.

321

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCES

collector-emitter voltage

RBE =0

−−

VEBO

collector-base voltage

open collector

−−

collector current (DC)

−−

120

Ptot

total power dissipation

Ts ≤ 60 °C; note 1

−−

1.2

hFE

DC current gain

IC = 40 mA; VCE =8V; Tj =25 °C

100

120

250

transition frequency

IC = 40 mA; VCE = 8 V; f = 1 GHz;

Tamb =25 °C

−

GHz

insertion power gain

IC = 40 mA; VCE =8V;

f = 900 MHz; Tamb =25 °C

−

noise ﬁgure

IC = 40 mA; VCE =8V;

f = 900 MHz;

ΓS = Γopt

−

1.9

2.4

Rev. 04 - 25 September 2007

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