IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGF30N400

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

14

23

S

I

C(ON)

V

360

A

C

ies

3040

pF

C

oes

V

95

pF

C

res

30

pF

Q

g

135

nC

Q

ge

I

22

nC

Q

gc

50

nC

t

d(on)

55

ns

t

r

146

ns

t

d(off)

210

ns

t

f

514

ns

R

thJC

0.78 °C/W

R

thCS

0.15

°C/W

R

thJA

30

°C/W

Resistive Switching Times

I

V

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Pin 1 = Gate

Pin 2 = Emitter

Pin 3 = Collector

Tab 4 = Isolated

Notes:

2. Device must be heatsunk for high-temperature leakage current

measurements to avoid thermal runaway.