SI3441DV datasheet(2/5 Pages) VISHAY

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Si3441DV

Vishay Siliconix

www.vishay.com

Document Number: 71839

S-20211—Rev. G, 01-Apr-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 mA

- 0.45

- 0.95

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

-1

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V, TJ = 70_C

-5

On State Drain Currenta

ID( )

VDS = - 5 V, VGS = - 4.5 V

-10

On-State Drain Currenta

ID(on)

VDS = - 5 V, VGS = - 2.5 V

-4

Drain Source On State Resistancea

VGS = - 4.5 V, ID = - 3.3 A

0.067

0.10

Drain-Source On-State Resistancea

rDS(on)

VGS = - 2.5 V, ID = - 2.9 A

0.100

0.135

Forward Transconductancea

gfs

VDS = - 10 V, ID = - 3.3 A

Diode Forward Voltagea

VSD

IS = - 1.6 A, VGS = 0 V

0.8

- 1.2

Dynamicb

Total Gate Charge

5.5

Gate-Source Charge

Qgs

VDS = - 10 V, VGS = - 4.5 V, ID = - 3.3 A

1.2

Gate-Drain Charge

Qgd

1.1

Turn-On Delay Time

td(on)

Rise Time

VDD = - 10 V, RL = 10 W

Turn-Off Delay Time

td(off)

VDD = - 10 V, RL = 10 W

ID ^ - 1.6 A, VGEN = - 4.5 V, RG = 6 W

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = - 1.6 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

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