Block Diagram

Temperature Under Bias................. -55°C to +125°C

Storage Temperature...................... -65°C to +150°C

All Input Voltages

(including NC Pins)

with Respect to Ground ................... -0.6V to +6.25V

All Output Voltages

Voltage on OE and A9

with Respect to Ground ................... -0.6V to +13.5V

*NOTICE: Stresses beyond those listed under “Absolute Maxi-

mum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the

device at these or any other conditions beyond those indi-

cated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions

for extended periods may affect device reliability.

Absolute Maximum Ratings*

access times to 120 ns with power dissipation of just 440

mW. When the device is deselected, the CMOS standby

current is less than 300

µA.

The AT28C010 is accessed like a Static RAM for the read

or write cycle without the need for external components.

The device contains a 128-byte page register to allow writ-

ing of up to 128-bytes simultaneously. During a write cy-

cle, the address and 1 to 128-bytes of data are internally

latched, freeing the address and data bus for other opera-

tions. Following the initiation of a write cycle, the device

will automatically write the latched data using an internal

control timer. The end of a write cycle can be detected by

DATA POLLING of I/O7. Once the end of a write cycle has

been detected a new access for a read or write can begin.

Atmel’s 28C010 has additional features to ensure high

quality and manufacturability. The device utilizes internal

error correction for extended endurance and improved

data retention characteristics. An optional software data

protection mechanism is available to guard against inad-

vertent writes. The device also includes an extra 128-

Description (Continued)

2-244

AT28C010 Mil