1

Features

– Internal Address and Data Latches for 64 Bytes

– Page Write Cycle Time: 10 ms Maximum

– 1 to 64-byte Page Write Operation

– 40 mA Active Current

– 100 µA CMOS Standby Current

– Endurance: 100,000 Cycles

– Data Retention: 10 Years

± 10% Supply

Description

The AT28C64B is a high-performance electrically-erasable and programmable read

only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 150 ns with power dissipation of just 220 mW. When the device is

deselected, the CMOS standby current is less than 100 µA.

64K (8K x 8)

Parallel

EEPROM with

Page Write and

Software Data

Protection

AT28C64B

Rev. 0270H–12/99

Pin Configurations

Pin Name

Function

A0 - A12

Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

I/O0 - I/O7

Data Inputs/Outputs

NC

No Connect

DC

Don’t Connect

PDIP, SOIC

Top View

1

2

3

4

5

6

7

8

9

10

11

12

13

14

28

27

26

25

24

23

22

21

20

19

18

17

16

15

NC

A12

A7

A6

A5

A4

A3

A2

A1

A0

I/O0

I/O1

I/O2

GND

VCC

WE

NC

A8

A9

A11

OE

A10

CE

I/O7

I/O6

I/O5

I/O4

I/O3

TSOP

Top View

1

2

3

4

5

6

7

8

9

10

11

12

13

14

28

27

26

25

24

23

22

21

20

19

18

17

16

15

OE

A11

A9

A8

NC

WE

VCC

NC

A12

A7

A6

A5

A4

A3

A10

CE

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

A0

A1

A2

PLCC

Top View

Note:

PLCC package pins 1 and 17 are

DON’T CONNECT.

5

6

7

8

9

10

11

12

13

29

28

27

26

25

24

23

22

21

A6

A5

A4

A3

A2

A1

A0

NC

I/O0

A8

A9

A11

NC

OE

A10

CE

I/O7

I/O6

(continued)