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LP38693 Datasheet(PDF) 13 Page - Texas Instruments

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Part # LP38693
Description   500mA Low Dropout CMOS Linear Regulators Stable with Ceramic Output Capacitors
PDF  27 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LP38693 Datasheet(HTML) 13 Page - Texas Instruments

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LP38691, LP38693
www.ti.com
SNVS321K – JANUARY 2005 – REVISED APRIL 2013
The DAP (exposed pad) on the bottom of the WSON package is connected to the die substrate with a conductive
die attach adhesive. The DAP has no direct electrical (wire) connection to any of the pins. There is a parasitic PN
junction between the die substrate and the device ground. As such, it is strongly recommend that the DAP be
connected directly to the ground at device lead 2 (i.e. GND). Alternately, but not recommended, the DAP may be
left floating (i.e. no electrical connection). The DAP must not be connected to any potential other than ground.
For the LP38691SD and LP38693SD in the NGG0006A 6-Lead WSON package, the junction-to-case thermal
rating,
θJC, is 10.4°C/W, where the case is the bottom of the package at the center of the DAP. The junction-to-
ambient thermal performance for the LP38691SD and LP38693SD in the NGG0006A 6-Lead WSON package,
using the JEDEC JESD51 standards is summarized in the following table:
Board
Thermal
θJC
θJA
Type
Vias
JEDEC
2-Layer
None
10.4°C/W
237° C/W
JESD 51-3
1
10.4°C/W
74° C/W
JEDEC
2
10.4°C/W
60° C/W
4-Layer
4
10.4°C/W
49° C/W
JESD 51-7
6
10.4°C/W
45° C/W
RFI/EMI SUSCEPTIBILITY
RFI (radio frequency interference) and EMI (electromagnetic interference) can degrade any integrated circuit’s
performance because of the small dimensions of the geometries inside the device. In applications where circuit
sources are present which generate signals with significant high frequency energy content (> 1 MHz), care must
be taken to ensure that this does not affect the IC regulator.
If RFI/EMI noise is present on the input side of the regulator (such as applications where the input source comes
from the output of a switching regulator), good ceramic bypass capacitors must be used at the input pin of the IC.
If a load is connected to the IC output which switches at high speed (such as a clock), the high-frequency current
pulses required by the load must be supplied by the capacitors on the IC output. Since the bandwidth of the
regulator loop is less than 100 kHz, the control circuitry cannot respond to load changes above that frequency.
This means the effective output impedance of the IC at frequencies above 100 kHz is determined only by the
output capacitor(s).
In applications where the load is switching at high speed, the output of the IC may need RF isolation from the
load. It is recommended that some inductance be placed between the output capacitor and the load, and good
RF bypass capacitors be placed directly across the load.
PCB layout is also critical in high noise environments, since RFI/EMI is easily radiated directly into PC traces.
Noisy circuitry should be isolated from "clean" circuits where possible, and grounded through a separate path. At
MHz frequencies, ground planes begin to look inductive and RFI/ EMI can cause ground bounce across the
ground plane. In multi-layer PCB applications, care should be taken in layout so that noisy power and ground
planes do not radiate directly into adjacent layers which carry analog power and ground.
OUTPUT NOISE
Noise is specified in two ways: Spot Noise or Output Noise Density is the RMS sum of all noise sources,
measured at the regulator output, at a specific frequency (measured with a 1Hz bandwidth). This type of noise is
usually plotted on a curve as a function of frequency. Total Output Noise or Broad-Band Noise is the RMS
sum of spot noise over a specified bandwidth, usually several decades of frequencies.
Attention should be paid to the units of measurement. Spot noise is measured in units µV/root-Hz or nV/root-Hz
and total output noise is measured in µV(rms)
The primary source of noise in low-dropout regulators is the internal reference. Noise can be reduced in two
ways: by increasing the transistor area or by increasing the current drawn by the internal reference. Increasing
the area will decrease the chance of fitting the die into a smaller package. Increasing the current drawn by the
internal reference increases the total supply current (ground pin current).
Copyright © 2005–2013, Texas Instruments Incorporated
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