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TSC741 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSC741 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  TSC741 High Voltage Fast-Switching NPN Power Transistor 1/4 Version: B13 TO-220 PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC 2A VCE(SAT) 0.5V @ IC=0.7A, IB=0.14A Features ● High Voltage Capability ● High Switching Speed Block Diagram Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TSC741CZ C0 TO-220 50pcs / Tube Absolute Maximum Rating (TA = 25 oC, unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 1050 V Collector-Emitter Voltage @ VBE=0V VCES 450 V Emitter-Base Voltage VEBO 15 V Collector Current IC 2 A Collector Peak Current (tp <5ms) ICM 4 A Base Current IB 1.5 A Base Peak Current (tp <5ms) IBM 3 A Power Total Dissipation @ Tc=25ºC PDTOT 60 W Maximum Operating Junction Temperature TJ +150 oC Storage Temperature Range TSTG -55 to +150 oC Note: Single Pulse. PW = 300uS, Duty ≤2% Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case RӨJC 1.8 oC/W Thermal Resistance - Junction to Ambient RӨJA 62.5 oC/W Pin Definition: 1. Base 2. Collector 3. Emitter |
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Similar Description - TSC741 |
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