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TSM3N90CPROG Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM3N90CPROG Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 12 page  TSM3N90 900V N-Channel Power MOSFET 1/12 Version: C13 TO-220 ITO-220 PRODUCT SUMMARY VDS (V) RDS(on)( Ω) ID (A) 900 5.1 @ VGS =10V 1.25 General Description The TSM3N90 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. TO-251 (IPAK) TO-252 (DPAK) Features ● Low RDS(ON) 4.3Ω (Typ.) ● Low gate charge typical @ 17nC (Typ.) ● Low Crss typical @ 8.7pF (Typ.) Ordering Information Part No. Package Packing TSM3N90CH C5G TO-251 75pcs / Tube TSM3N90CP ROG TO-252 2.5Kpcs / 13” Reel TSM3N90CZ C0 TO-220 50pcs / Tube TSM3N90CI C0G ITO-220 50pcs / Tube Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit IPAK/DPAK ITO-220 TO-220 Drain-Source Voltage VDS 900 V Gate-Source Voltage VGS ±30 V Continuous Drain Current Tc = 25ºC ID 2.5 A Tc = 100ºC 1.6 A Pulsed Drain Current * IDM 10 A Single Pulse Avalanche Energy (Note 2) EAS 10 mJ Avalanche Current (Repetitive) (Note 1) IAR 2.5 A Repetitive Avalanche Energy (Note 1) EAR 9.4 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Total Power Dissipation @ TC = 25 oC PTOT 94 32 94 W Operating Junction Temperature TJ 150 ºC Storage Temperature Range TSTG -55 to +150 oC Note: Limited by maximum junction temperature Pin Definition: 1. Gate 2. Drain 3. Source Block Diagram N-Channel MOSFET |
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