TSM4459CSRLG datasheet(2/4 Pages) TSC

2 / 4 page

TSM4459

30V P-Channel MOSFET

2/4

Version: A12

Electrical Specifications (TA = 25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250uA

BVDSS

-30

Gate Threshold Voltage

VDS = VGS, ID = -250µA

VGS(TH)

-1

-3

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = -30V, VGS = 0V

IDSS

-1.0

µA

Drain-Source On-State Resistance

VGS = -10V, ID = -9A

RDS(ON)

5.2

mΩ

VGS = -4.5V, ID = -9A

9.5

Diode Forward Voltage

IS = -18A, VGS = 0V

VSD

0.8

Dynamic

Total Gate Charge

VDS = -24V, ID = -17A,

VGS = -4.5V

78.4

Gate-Source Charge

Qgs

25.1

Gate-Drain Charge

Qgd

38.7

Gate Resistance

f = 1.0MHz

2.88

Ω

Input Capacitance

VDS = -15V, VGS = 0V,

f = 1.0MHz

Ciss

6205

Output Capacitance

Coss

963

Reverse Transfer Capacitance

Crss

330

Switching

Turn-On Delay Time

VDD = -15V, RL = 15Ω,

VGEN = -10V,

RG = 4.7Ω

td(on)

75.2

Turn-On Rise Time

33.8

Turn-Off Delay Time

td(off)

275

Turn-Off Fall Time

92.1

Notes:

pulse test: PW ≤300µS, duty cycle ≤2%

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