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TSM4539D Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM4539D Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 4 page  TSM4539D Complementary Enhancement MOSFET 2/4 Version: A12 Electrical Specifications (TA=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0V, ID = 250uA BVDSS N-CH 30 -- -- V VGS =0V, ID =-250uA P-CH -30 -- -- Gate Threshold Voltage VDS =VGS, ID = 250µA VGS(TH) N-CH 1.0 1.4 3.0 V VDS =VGS, ID =-250µA P-CH -1.0 -1.5 -3.0 Gate Body Leakage VGS = ±20V, VDS =0V IGSS N-CH -- -- ±100 nA VGS = ±20V, VDS =0V P-CH -- -- ±10 Zero Gate Voltage Drain Current VDS =24V, VGS =0V IDSS N-CH -- -- 1 µA VDS =-24V, VGS =0V P-CH -- -- -1 Drain-Source On-State Resistance a VGS =10V, ID =6.5A RDS(ON) N-CH -- 23 28 mΩ VGS =-10V, ID =-4.2A P-CH -- 50 65 VGS =4.5V, ID =5A N-CH -- 35 42 VGS =-4.5V, ID =-3.5A P-CH 82 90 Dynamic b Total Gate Charge N-Channel VDS =10V, ID =1A, VGS =10V Qg N-CH -- 7 -- nC P-CH -- 9.7 -- Gate-Source Charge Qgs N-CH -- 1.6 -- P-Channel VDS =-15V, ID =-5.2A, VGS =-10V P-CH -- 1.6 -- Gate-Drain Charge Qgd N-CH -- 1.0 -- P-CH -- 1.3 -- Input Capacitance N-Channel VDS =15V, VGS = 0V, f = 1.0MHz Ciss N-CH -- 610 -- pF P-CH -- 100 -- Output Capacitance Coss N-CH -- 77 -- P-Channel VDS =-15V, VGS = 0V, f = 1.0MHz P-CH -- 551 -- Reverse Transfer Capacitance Crss N-CH -- 90 -- P-CH -- 60 -- Switching b Turn-On Delay Time N-Channel VDD =15V, ID = 1A, VGEN =10V, RG = 6Ω td(on) N-CH -- 7 -- nS P-CH -- 6.2 -- Turn-On Rise Time tr N-CH -- 10 -- P-CH -- 6.2 -- Turn-Off Delay Time P-Channel VDD =-15V, ID = -1A, VGEN =-10V, RG = 6Ω td(off) N-CH -- 16 -- P-CH -- 26 -- Turn-Off Fall Time tf N-CH -- 7 -- P-CH -- 5.5 -- Diode Forward Voltage IS =1 A, VGS = 0V VSD N-CH -- -- 1.0 V IS =-1.9A, VGS = 0V P-CH -- -- -1.3 Notes: a. Pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. |
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