NVMFD5877NL datasheet(2/6 Pages) ONSEMI

2 / 6 page

NVMFD5877NL, NVMFD5877NLWF

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 60 V

TJ = 25°C

1.0

TJ = 125°C

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20 V

±100

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.0

3.0

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

3.5

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V

ID = 7.5 A

VGS = 4.5 V

ID = 7.5 A

Forward Transconductance

gFS

VDS = 15 V, ID = 5.0 A

7.0

CHARGES AND CAPACITANCES

Input Capacitance

Ciss

VGS = 0 V, f = 1.0 MHz, VDS = 25 V

540

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 48 V,

ID = 5.0 A

5.9

Threshold Gate Charge

QG(TH)

0.62

Gate−to−Source Charge

QGS

1.64

Gate−to−Drain Charge

QGD

2.80

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 48V, ID = 5.0A

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(on)

VGS = 4.5 V, VDS = 48 V,

ID = 5.0 A, RG = 2.5 W

8.1

Rise Time

15.8

Turn−Off Delay Time

td(off)

11.8

Fall Time

3.9

Turn−On Delay Time

td(on)

VGS = 10 V, VDS = 48 V,

ID = 5.0 A, RG = 2.5 W

4.9

Rise Time

6.4

Turn−Off Delay Time

td(off)

14.5

Fall Time

2.4

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 5.0 A

TJ = 25°C

0.8

1.2

TJ = 125°C

0.7

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 5.0 A

14.5

Charge Time

11.5

Discharge Time

3.1

Reverse Recovery Charge

QRR

PACKAGE PARASITIC VALUES

Source Inductance

TA = 25°C

0.93

Drain Inductance

0.005

Gate Inductance

1.84

Gate Resistance

1.5

5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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