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OPA847IDBVR Datasheet(PDF) 3 Page - Texas Instruments |
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OPA847IDBVR Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 30 page  OPA847 3 SBOS251E www.ti.com OPA847ID, IDBV TYP MIN/MAX OVER TEMPERATURE 0 °C to –40 °C to MIN/ TEST PARAMETER CONDITIONS +25 °C +25 °C(1) 70 °C(2) +85 °C(2) UNITS MAX LEVEL(3) ELECTRICAL CHARACTERISTICS: VS = ±5V Boldface limits are tested at +25 °C. RL = 100Ω, RF = 750Ω, RG = 39.2Ω, and G = +20 (see Figure 1 for AC performance only), unless otherwise noted. NOTES: (1) Junction temperature = ambient for +25 °C specifications. (2) Junction temperature = ambient at low temperature limit: junction temperature = ambient +23°C at high temperature limit for over temperature specifications. (3) Test Levels: (A) 100% tested at 25 °C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out of node. VCM is the input common-mode voltage. (5) Tested < 3dB below minimum specified CMRR at ±CMIR limits. AC PERFORMANCE (see Figure 1) Closed-Loop Bandwidth G = +12, RG = 39.2Ω, VO = 200mVPP 600 MHz typ C G = +20, RG = 39.2Ω, VO = 200mVPP 350 230 210 195 MHz min B G = +50, RG = 39.2Ω, VO = 200mVPP 78 63 60 57 MHz min B Gain Bandwidth Product (GBP) G ≥ +50 3900 3100 3000 2800 MHz min B Bandwidth for 0.1dB Gain Flatness G = +20, RL = 100Ω 60 40 35 30 MHz min B Peaking at a Gain of +12 4.5 7 10 12 dB max B Harmonic Distortion G = +20, f = 5MHz, VO = 2VPP 2nd-Harmonic RL = 100Ω –74 –70 –69 –68 dBc max B RL = 500Ω –105 –90 –89 –88 dBc max B 3rd-Harmonic RL = 100Ω –103 –96 –91 –88 dBc max B RL = 500Ω –110 –105 –100 –90 dBc max B 2-Tone, 3rd-Order Intercept G = +20, f = 20MHz 39 37 36 35 dBm min B Input Voltage Noise Density f > 1MHz 0.85 0.92 0.98 1.0 nV/√Hz max B Input Current Noise Density f > 1MHz 2.5 3.5 3.6 3.7 pA/√Hz max B Pulse Response Rise-and-Fall Time 0.2V Step 1.2 1.75 2.0 2.2 ns max B Slew Rate 2V Step 950 700 625 535 V/ µsmin B Settling Time to 0.01% 2V Step 20 ns typ C 0.1% 2V Step 10 12 14 18 ns max B 1% 2V Step 6 8 10 12 ns max B DC PERFORMANCE(4) Open-Loop Voltage Gain (AOL)VO = 0V 98 90 89 88 dB min A Input Offset Voltage VCM = 0V ±0.1 ±0.5 ±0.58 ±0.60 mV max A Average Offset Voltage Drift VCM = 0V ±0.25 ±0.25 ±1.5 ±1.5 µV/°Cmax B Input Bias Current VCM = 0V –19 –39 –41 –42 µAmax A Input Bias Current Drift (magnitude) VCM = 0V –15 –15 –40 –70 nA/ °Cmax B Input Offset Current VCM = 0V ±0.1 ±0.6 ±0.7 ±0.85 µAmax A Input Offset Current Drift VCM = 0V ±0.1 ±0.1 ±2 ±3.5 nA/ °Cmax B INPUT Common-Mode Input Range (CMIR)(5) ±3.3 ±3.1 ±3.0 ±2.9 V min A Common-Mode Rejection Ratio (CMRR) VCM = ±0.5V, Input-Referred 110 95 93 90 dB min A Input Impedance Differential VCM = 0V 2.7 || 2.0 k Ω || pF typ C Common-Mode VCM = 0V 2.3 || 1.7 M Ω || pF typ C OUTPUT Output Voltage Swing ≥ 400Ω Load ±3.5 ±3.3 ±3.1 ±3.0 V min A 100 Ω Load ±3.4 ±3.2 ±3.0 ±2.9 V min A Current Output, Sourcing VO = 0V 100 60 56 52 mA min A Current Output, Sinking VO = 0V –75 –60 –56 –52 mA min A Closed-Loop Output Impedance G = +20, f = < 100kHz 0.003 Ω typ C POWER SUPPLY Specified Operating Voltage ±5 V typ C Maximum Operating Voltage ±6 ±6 ±6 ±6V max A Maximum Quiescent Current VS = ±5V 18.1 18.4 18.7 18.9 mA max A Minimum Quiescent Current VS = ±5V 18.1 17.8 17.5 17.1 mA min A Power-Supply Rejection Ratio +PSRR, –PSRR |VS| = 4.5V to 5.5V, Input-Referred 100 95 93 90 dB min A POWER-DOWN (disabled low) (Pin 8 on SO-8; Pin 5 on SOT23-6) Power-Down Quiescent Current (+VS) –200 –270 –320 –370 µAmax A On Voltage (enabled high or floated) 3.5 3.75 3.85 3.95 V min A Off Voltage (disabled asserted low) 1.8 1.7 1.6 1.5 V max A Power-Down Pin Input Bias Current (VDIS = 0) 150 190 200 210 µAmax A Power-Down Time 200 ns typ C Power-Up Time 60 ns typ C Off Isolation 5MHz, Input to Output 70 dB typ C THERMAL Specification ID, IDBV –40 to +85 °C typ C Thermal Resistance, θ JA Junction-to-Ambient DSO-8 125 °C/W typ C DBV SOT23 150 °C/W typ C |
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