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CSD87384M Datasheet(PDF) 2 Page - Texas Instruments

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Part # CSD87384M
Description  CSD87384M Synchronous Buck NexFET Power Block II
PDF  21 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

CSD87384M Datasheet(HTML) 2 Page - Texas Instruments

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CSD87384M
SLPS415B – SEPTEMBER 2013 – REVISED JANUARY 2014
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
TA = 25°C (unless otherwise noted)
(1)
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VIN to PGND
–0.8
30
VSW to PGND
30
Voltage range
VSW to PGND (10 ns)
32
V
TG to VSW
–8
10
BG to PGND
–8
10
Pulsed Current Rating, IDM
(2)
95
A
Power Dissipation, PD
(3)
8
W
Sync FET, ID = 68, L = 0.1 mH
231
Avalanche Energy EAS
mJ
Control FET, ID = 31 L = 0.1 mH
48
Operating Junction and Storage Temperature Range, TJ, TSTG
–55
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability.
(2)
Pulse Duration
≤ 50 µs. Duty cycle ≤ 0.01.
(3)
Device mounted on FR4 material with 1-inch2 (6.45-cm2) Cu.
Recommended Operating Conditions
TA = 25°C (unless otherwise noted)
PARAMETER
CONDITIONS
MIN
MAX
UNIT
Gate Drive Voltage, VGS
4.5
8
V
Input Supply Voltage, VIN
24
V
Switching Frequency, fSW
CBST = 0.1 μF (min)
200
1500
kHz
No Airflow
30
A
Operating Current
With Airflow (200 LFM)
35
A
With Airflow + Heat Sink
40
A
Operating Temperature, TJ
125
°C
Power Block Performance
TA = 25°C (unless otherwise noted)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 12 V, VGS = 5 V
VOUT = 1.3 V, IOUT = 25 A
Power Loss, PLOSS
(1)
3.7
W
fSW = 500 kHz
LOUT = 0.3 µH, TJ = 25ºC
TG to TGR = 0 V
VIN Quiescent Current, IQVIN
10
µA
BG to PGND = 0 V
(1)
Measurement made with six 10 µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins and
using a high current 5 V driver IC.
2
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Copyright © 2013–2014, Texas Instruments Incorporated



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