C unless otherwise specified

I

S

Continuous Source-Drain Diode Forward Current

--

--

5.0

A

I

SM

Pulsed Source-Drain Diode Forward Current

--

--

13.0

V

SD

Source-Drain Diode Forward Voltage

I

--

--

1.2

V

trr

Reverse Recovery Time

I

di

(Note 4)

--

120

--

Qrr

Reverse Recovery Charge

--

1

--

Irrm

Peak Reverse Recovery Current

--

9

--

A

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

V

GS

Gate Threshold Voltage

V

2.5

--

4.5

V

R

DS(ON)

Static Drain-Source

On-Resistance

V

--

1.05

1.25

On Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

700

--

--

V

I

DSS

Zero Gate Voltage Drain Current

V

--

--

1

V

--

--

10

I

GSS

Gate-Body Leakage Current

V

20 V, V

--

--

100

Off Characteristics

C

iss

Input Capacitance

V

f = 1.0 MHz

--

300

390

C

oss

Output Capacitance

--

20

26

C

rss

Reverse Transfer Capacitance

--

5

6.5

Dynamic Characteristics

t

d(on)

Turn-On Time

V

R

(Note 4,5)

--

15

40

t

r

Turn-On Rise Time

--

20

50

t

d(off)

Turn-Off Delay Time

--

50

110

t

f

Turn-Off Fall Time

--

25

60

Q

g

Total Gate Charge

V

V

(Note 4,5)

--

7.0

9.0

nC

Q

gs

Gate-Source Charge

--

1.5

--

nC

Q

gd

Gate-Drain Charge

--

2.0

--

nC

V

plateau

Gate-Plateau Voltage

--

5.0

--

V

Switching Characteristics

Source-Drain Diode Maximum Ratings and Characteristics

Package Marking and Odering Information

Device Marking

Week Marking

Package

Packing

Quantity

RoHS Status

HCD6NC70S

YWWX

TO-251

Tube / Reel

80 / 2,500

Pb Free

HCD6NC70S

YWWXg

TO-251

Tube / Reel

80 / 2,500

Halogen Free

Notes ;

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L=15mH, I

, Starting T

3. I

SD

,di/dt

, V

DD

C

4. Pulse Test : Pulse Width

5. Essentially Independent of Operating Temperature