Switch Mode series NPN silicon Power Transistor

KSC13003A

Switch Mode series NPN silicon Power Transistor

- High voltage, high speed power switching

- Suitable for switching regulator, inverters motor controls

CHARACTERISTICS

SYMBOL

RATING

UNIT

Collector-Base Voltage

Collector Emitter Voltage

V

700

400

V

V

1.5 Amperes

NPN Silicon Power Transistor

20 Watts

TO-126

1. Base

2. Collector

3. Emitter

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulse)

Base Current

Collector Dissipation(Tc=25℃)

Junction Temperature

Storage Temperature

400

9

1.5

3

0.75

20

150

-65~150

V

V

A

A

A

W

℃

℃

Electrical Characteristics

1

2

3

CHARACTERISTICS

SYMBOL

Test Condition

Min

Typ.

Max

Unit

Collector-Emitter Breakdown Voltage

400

V

Emitter Cut-off Current

10

㎂

*DC Current Gain

9

5

40

*Collector-Emitter Saturation Voltage

V (sat)

I =0 5A I =0 1A

05

V

Collector-Emitter Saturation Voltage

0.5

1

3

V

V

V

*Base-Emitter Saturation Voltage

1

1.2

V

V

Output Capacitance

21

㎊

Current Gain Bandwidth Product

4

㎒

Turn on Time

1.1

㎲

Turn on Time

Vcc=125V, Ic=2A

1.1

㎲

Storage Time

4.0

㎲

Fall Time

0.7

㎲

* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

hFE1

R9 ~ 16

O

14

21

Note.

S

SemiHow symbol

YWW

Yd

WW

k

d

Package Mark information.

◎ SEMIHOW REV.A1,Oct 2007

Classification

O

14 ~ 21

Y

19 ~ 26

KSC13003A

YWW

Y; year code, WW; week code

Z

hFE1 Classification