◎ SEMIHOW REV.A1,Oct 2007

Switch Mode series NPN silicon Power Transistor

- High voltage, high speed power switching

- Suitable for switching regulator, inverters motor controls

KSC13003H

CHARACTERISTICS

SYMBOL

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulse)

Base Current

Collector Dissipation(Tc=25℃)

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

900

530

9

1.5

3

0.75

20

150

-65~150

V

V

V

A

A

A

W

℃

℃

1.5 Amperes

NPN Silicon Power Transistor

20 Watts

CHARACTERISTICS

SYMBOL

Test Condition

Min

Typ.

Max

Unit

Collector-Emitter Breakdown Voltage

V

CEO

I

400

V

Emitter Cut-off Current

I

EBO

V

10

㎂

*DC Current Gain

h

FE1

h

FE2

V

V

9

5

40

*Collector-Emitter Saturation Voltage

V

I

I

I

0.5

1

3

V

V

V

*Base-Emitter Saturation Voltage

V

I

I

1

1.2

V

V

Output Capacitance

C

ob

V

21

㎊

Current Gain Bandwidth Product

f

T

V

4

㎒

Turn on Time

t

on

Vcc=125V, Ic=2A

I

R

1.1

㎲

Storage Time

t

stg

4.0

㎲

Fall Time

t

F

0.7

㎲

* Pulse Test: Pulse Width

≤300μs, Duty Cycle≤2%

TO-126

1. Base

2. Collector

3. Emitter

1

2

3

hFE1

Classification

R

20 ~ 30

O

25 ~ 35

Y

30 ~ 40

Note.

KSC13003H

S

SemiHow symbol

YWW

Y; year code, WW; week code

Z

hFE1 Classification

Package Mark information.