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PACDN002S Datasheet(PDF) 2 Page - California Micro Devices Corp |
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PACDN002S Datasheet(HTML) 2 Page - California Micro Devices Corp |
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2 / 3 page ![]() © 1999 California Micro Devices Corp. All rights reserved. 11/99 PAC DN002 2 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com CALIFORNIA MICRO DEVICES N O I T A M R O F N I G N I R E D R O T R A P D R A D N A T S e g a k c a Pr e b m u N t r a P g n i r e d r O s n i Pe l y t Sg n i k r a M t r a P 0 2C I O SS 2 0 0 N D C A P 0 2P O S QQ 2 0 0 N D C A P When placing an order please specify desired shipping: Tubes or Tape & Reel. Application Information See also California Micro Devices Application note AP209, Design Considerations for ESD protection. In order to realize the maximum protection against ESD pulses, care must be taken in the PCB layout to minimize parasitic series inductances to the Supply and Ground rails. Refer to Figure 1, which illustrates the case of a positive ESD pulse applied between an input channel and Chassis Ground. The parasitic series inductance back to the power supply is represented by L1. The voltage VZ on the line being protected is: VZ = Forward voltage drop of D1 + L1 x d(Iesd)/dt + VSupply where Iesd is the ESD current pulse, and VSupply is the positive supply voltage. An ESD current pulse can rise from zero to its peak value in a very short time. As an example, a level 4 contact discharge per the IEC 61000-4-2 standard results in a current pulse that rises from zero to 30 Amps in 1nS. Here d(Iesd)/dt can be approximated by ∆Iesd/∆t, or 30/(1x10-9). So just 10nH of series inductance (L1) will lead to a 300V increment in VZ! Figure 1 Typical variation of CIN with VIN (VP = 12V, VN = 0V, 0.1µF chip capacitor between VP & VN) Input Capacitance vs. Input Voltage 2 3 4 5 6 7 8 9 10 11 12 02 468 10 12 Input Voltage (V) |
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