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PACDN002S Datasheet(PDF) 2 Page - California Micro Devices Corp

Part # PACDN002S
Description  17 CHANNEL ESD PROTECTION ARRAY
PDF  3 Pages
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Manufacturer  CALMIRCO [California Micro Devices Corp]
Direct Link  http://www.calmicro.com
Logo CALMIRCO - California Micro Devices Corp

PACDN002S Datasheet(HTML) 2 Page - California Micro Devices Corp

  PACDN002S Datasheet HTML 1Page - California Micro Devices Corp PACDN002S Datasheet HTML 2Page - California Micro Devices Corp PACDN002S Datasheet HTML 3Page - California Micro Devices Corp  
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© 1999 California Micro Devices Corp. All rights reserved.
11/99
PAC DN002
2
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
CALIFORNIA MICRO DEVICES
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When placing an order please specify desired shipping: Tubes or Tape & Reel.
Application Information
See also California Micro Devices Application note AP209, “Design Considerations for ESD protection.”
In order to realize the maximum protection against ESD pulses, care must be taken in the PCB layout to minimize
parasitic series inductances to the Supply and Ground rails. Refer to Figure 1, which illustrates the case of a positive
ESD pulse applied between an input channel and Chassis Ground. The parasitic series inductance back to the power
supply is represented by L1. The voltage VZ on the line being protected is:
VZ = Forward voltage drop of D1 + L1 x d(Iesd)/dt + VSupply
where Iesd is the ESD current pulse, and VSupply is the positive supply voltage.
An ESD current pulse can rise from zero to its peak value in a very short time. As an example, a level 4 contact discharge
per the IEC 61000-4-2 standard results in a current pulse that rises from zero to 30 Amps in 1nS. Here d(Iesd)/dt can be
approximated by ∆Iesd/∆t, or 30/(1x10-9). So just 10nH of series inductance (L1) will lead to a 300V increment in VZ!
Figure 1
Typical variation of CIN with VIN
(VP = 12V, VN = 0V, 0.1µF chip capacitor between VP & VN)
Input Capacitance vs. Input Voltage
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Input Voltage (V)



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