P-Channel Enhancement Mode

MOSFET Amplifier/Switch

2N4352

FEATURES

ABSOLUTE MAXIMUM RATINGS

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±30V

Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA

Storage Temperature Range . . . . . . . . . . . . . -65

Operating Temperature Range . . . . . . . . . . . -55

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

Derate above 25

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ORDERING INFORMATION

Part

Package

Temperature Range

2N4352

Hermetic TO-72

-55

X2N4352

Sorted Chips in Carriers

-55

CORPORATION

PIN CONFIGURATION

TO-72

G

D

C

S

1503

SYMBOL

PARAMETER

MIN

MAX

UNITS

TEST CONDITIONS

Drain-Source Breakdown Voltage

-25

Vdc

Zero-Gate-Voltage Drain Current

-10

-10

nAdc

µAdc

Gate Reverse Current

±10

pA

Gate Threshold Voltage

-1.0

-5.0

Vdc

µA

Drain-Source On-Voltage

-1.0

V

On-State Drain Current

-3.0

mA

Drain-Source Resistance

600

ohms

Forward Transfer Admittance

1000

µmho

Input Capacitance

5.0

pF

Reverse Transfer Capacitance

1.3

Drain-Substrate Capacitance

5.0

Turn-On Delay

45

ns

Rise Time

65

Turn-Off Delay

60

Fall Time

100

CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025