2N7000 / BS170L

CORPORATION

SYMBOL

PARAMETERS

LIMITS

UNITS

TEST CONDITIONS

Drain-Source Voltage

60

V

Gate-Source Voltage

±40

Continuous Drain Current

0.2

A

0.13

Pulsed Drain Current

1

0.5

Power Dissipation

1

0.4

W

0.16

Operating Junction Temperature Range

-55 to 150

Storage Temperature Range

-55 to 150

Lead Temperature (1/16" from case for 10 sec.)

300

THERMAL RESISTANCE RATINGS

SYMBOL

THERMAL RESISTANCE

LIMITS

UNITS

Junction-to-Ambient

312.5

K/W

NOTE:

1. Pulse width limited by maximum junction temperature.

SPECIFICATIONS

1

SYMBOL

PARAMETER

MIN

TYP

2

MAX

UNIT

TEST CONDITIONS

STATIC

Drain-Source Breakdown Voltage

60

70

V

Gate-Threshold Voltage

0.8

1.9

3

Gate-Body Leakage

±10

nA

Zero Gate Voltage Drain Current

1

µA

1000

On-State Drain Current

3

75

210

mA

Drain-Source On-Resistance

3

4.8

5.3

Ω

2.5

5

4.4

9

Drain-Source On-Voltage

3

0.36

0.4

V

1.25

2.5

2.2

4.5

Forward Transconductance

3

100

170

mS

Common Source Output Conductance

3, 4

500

DYNAMIC

Input Capacitance

16

60

pF

Output Capacitance

4

11

25

Reverse Transfer Capacitance

2

5

SWITCHING

Turn-On Time

7

10

nS

Ω

(Switching time is essentially

independent of operating temperature)

Turn-Off Time

7

10

2. For design aid only, not subject to production testing.

3. Pulse test; PW =

≤300µS, duty cycle ≤3%.

4. This parameter not registered with JEDEC.