3N166 datasheet(2/2 Pages) CALOGIC

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ELECTRICAL CHARACTERISTICS (Continued) (TA = 25

oC and VBS = 0 unless otherwise specified)

SYMBOL

PARAMETER

MIN

MAX

UNITS

TEST CONDITIONS

gfs

Forward Transconductance

1500

3000

µSVDS = -15V, ID = -10mA, f = 1kHz

gos

Output Admittance

300

Ciss

Input Capacitance

3.0

VDS = -15V, ID = -10mA, f = 1MHz (Note 4)

Crss

Reverse Transfer Capacitance

0.7

Coss

Output Capacitance

3.0

RE(Yfs)

Common Source Forward Transconductance

1200

µs

VDS = -15V, ID = -10mA, f = 100MHz (Note 4)

3N165 / 3N166

CORPORATION

MATCHING CHARACTERISTICS

3N165

SYMBOL

PARAMETER

MIN

MAX

UNITS

TEST CONDITIONS

Yfs1 / Yfs2

Forward Transconductance Ratio

0.90

1.0

VDS = -15V, ID = -500

µA, f = 1kHz

VGS1-2

Gate Source Threshold Voltage Differential

100

VDS = -15V, ID = -500

µA

∆VGS1−2

∆T

Gate Source Threshold Voltage Differential

Change with Temperature

100

µV/oC

VDS = -15V, IA = -500

µA

TA = -55

oC to +25oC

NOTES: 1. See handling precautions on 3N170 data sheet.

2. Per transistor.

3. Devices must not be tested at

±125V more than once, nor longer than 300ms.

4. For design reference only, not 100% tested.

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