N-Channel Enhancement

Mode MOSFET Switch

3N170 / 3N171

FEATURES

HANDLING PRECAUTIONS

MOS field-effect transistors have extremely high input

resistance and can be damaged by the accumulation of

excess static charge. To avoid possible damage to the device

while wiring, testing, or in actual operation, follow the

procedures outlined below.

1. To avoid the build-up of static charge, the leads of the

devices should remain shorted together with a metal ring

except when being tested or used.

2. Avoid unnecessary handling. Pick up devices by the case

instead of the leads.

3. Do not insert or remove devices from circuits with the

power on as transient voltages may cause permanent

damage to the devices.

ABSOLUTE MAXIMUM RATINGS

Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±35V

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±35V

Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA

Storage Temperature Range . . . . . . . . . . . . . -65

Operating Temperature Range . . . . . . . . . . . -55

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

Derate above 25

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ORDERING INFORMATION

Part

Package

Temperature Range

3N170-71

Hermetic TO-72

-55

X3N170-71

Sorted Chips in Carriers

-55

CORPORATION

PIN CONFIGURATION

TO-72

G

D

S

C,B

1003