J210 – J212 / SSTJ210 – SSTJ212

CORPORATION

Parameter/Test Condition

Symbol

Limit

Unit

Gate-Drain Voltage

-25

V

Gate-Source Voltage

-25

V

Gate Current

10

mA

Power Dissipation

360

mW

Power Derating

3.27

mW/

Operating Junction Temperature

-55 to 135

Storage Temperature

-55 to 150

Lead Temperature (1/16" from case for 10 seconds)

300

SYMBOL

CHARACTERISTCS

TYP

1

210

211

212

UNIT

TEST CONDITIONS

MIN

MAX

MIN

MAX

MIN

MAX

STATIC

Gate-Source Breakdown Voltage

-35

-25

-25

-25

V

Gate-Source Cut off Voltage

-1

-3

-2.5

-4.5

-4

-6

Saturation Drain Current

2

2

15720

15

40

mA

Gate Reverse Current

-1

-100

-100

-100

pA

-0.5

nA

Gate Operating Current

-1

pA

Drain Cutoff Current

1

pA

Gate-Source Forward Voltage

0.7

V

DYNAMIC

Common-Source Forward

Transconductance

4

12612

7

12

mS

f = 1kHz

Common-Source Output

Conductance

150

200

200

µS

Common-Source Input Capacitance

4

pF

f = 1MHz

Common-Source Reverse

Transfer Capacitance

1.5

Equivalent Input Noise Voltage

5

nV/ Hz

f = 1kHz

NOTES: 1. For design aid only, not subject to production testing.

2. Pulse test; PW = 300

µs, duty cycle ≤ 3%.