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IRF6810STR1PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF6810STR1PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF6810STRPbF 2 www.irf.com Pulse width ≤ 400μs; duty cycle ≤ 2%. Notes: D S G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 4.0 5.2 ––– 5.6 7.3 VGS(th) Gate Threshold Voltage 1.1 1.6 2.1 V ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -5.9 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 182 ––– ––– S Qg Total Gate Charge ––– 7.4 11 Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.6 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 0.98 ––– Qgd Gate-to-Drain Charge ––– 2.7 ––– Qgodr Gate Charge Overdrive ––– 2.1 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 3.68 ––– Qoss Output Charge ––– 8.9 ––– nC RG Gate Resistance ––– 0.4 Ω td(on) Turn-On Delay Time ––– 8.2 ––– tr Rise Time ––– 22 ––– td(off) Turn-Off Delay Time ––– 11 ––– tf Fall Time ––– 4.8 ––– Ciss Input Capacitance ––– 1038 ––– Coss Output Capacitance ––– 325 ––– Crss Reverse Transfer Capacitance ––– 74 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) A ISM Pulsed Source Current (Body Diode) Ãg VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 12 18 ns Qrr Reverse Recovery Charge ––– 8.4 13 nC 16 130 VDS = VGS, ID = 25μA m Ω μA nA nC ns pF VGS = 4.5V, ID = 13A i ––– ––– ––– ––– di/dt = 280A/μs i TJ = 25°C, IS = 13A, VGS = 0V i showing the integral reverse p-n junction diode. TJ = 25°C, IF =13A VGS = 0V VDS = 13V ID = 13A VDD = 13V, VGS = 4.5VÃi Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 16A i VGS = 16V VGS = -16V VDS = 20V, VGS = 0V VDS = 13V VDS = 20V, VGS = 0V, TJ = 125°C MOSFET symbol RG= 1.8Ω VDS = 13V, ID =13A Conditions ƒ = 1.0MHz VDS = 16V, VGS = 0V VGS = 4.5V ID = 13A |
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