Diode Protected N-Channel

Enhancement Mode MOSFET

General Purpose Amplifier

M116

FEATURES

ABSOLUTE MAXIMUM RATINGS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Gate to Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Gate Zener Current . . . . . . . . . . . . . . . . . . . . . . . . . . .

±0.1mA

Storage Temperature Range . . . . . . . . . . . . . -65

Operating Temperature Range . . . . . . . . . . . -55

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW

Derate above 25

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ORDERING INFORMATION

Part

Package

Temperature Range

M116

Hermetic TO-72

-55

XM116

Sorted Chips in Carriers

-55

CORPORATION

PIN CONFIGURATION

TO-72

G

D

C

S

1003Z

DEVICE SCHEMATIC

SYMBOL

PARAMETER

MIN

MAX

UNITS

TEST CONDITIONS

Drain Source ON Resistance

100

Ω

µA

200

µA

Gate Threshold Voltage

1

5

V

µA

Drain-Source Breakdown Voltage

30

Source-Drain Breakdown Voltage

30

Gate-Body Breakdown Voltage

30

60

Drain Cuttoff Current

10

nA

Source Cutoff Current

10

Gate-Body Leakage

100

pA

Gate-Source (Note 1)

2.5

pF

Body Guarded

Gate-Drain Capacitance (Note 1)

2.5

Drain-Body Capacitance (Note 1)

7

Input Capacitance (Note 1)

10

NOTE 1: For design reference only, not 100% tested.

1

2

3

4

0330