Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Feb. 2014. Rev. 3.0

Features

■ High ruggedness

■ R

■ Gate Charge (Typ 11nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC converter

block and switch mode power supply.

N-channel I-PAK/D-PAK/TO-220F MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251

TO-252

TO-220F

V

DSS

Drain to Source Voltage

600

V

I

D

Continuous Drain Current (@T

4*

A

Continuous Drain Current (@T

2.5*

A

I

DM

Drain current pulsed

(note 1)

16

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

271

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

50

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

140

144.5

19.1

W

1.1

1.2

0.152

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251

TO-252

TO-220F

R

thjc

Thermal resistance, Junction to case

0.91

0.87

6.56

R

thcs

Thermal resistance, Case to Sink

R

thja

Thermal resistance, Junction to ambient

76.1

78.9

48.32

1/7

*. Drain current is limited by junction temperature.

BV

I

D

: 4A

R

SW4N60B

SAMWIN

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW I 4N60

SW4N60B

TO-251

TUBE

2

SW D 4N60

SW4N60B

TO-252

REEL

3

SW F 4N60

SW4N60B

TO-220F

TUBE

TO-251

1

2

3

TO-252

1

2

3

1. Gate 2. Drain 3. Source

TO-220F

1

3

2