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OM6002ST Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers

Part # OM6002ST
Description  POWER MOSFET IN HERMETIC ISOLATED JEDEC TO 257AA PACKAGE
PDF  4 Pages
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Manufacturer  ETC2 [List of Unclassifed Manufacturers]
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OM6002ST Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers

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ELECTRICAL CHARACTERISTICS: (T
C = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS: (T
C = 25°C unless otherwise noted)
STATIC P/N OM6103ST / OM6003ST (400V)
STATIC P/N OM6104ST / OM6004ST (500V)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
400
V
V
GS = 0,
BV
DSS
Drain-Source Breakdown
500
V
V
GS = 0,
Voltage
I
D = 250 mA
Voltage
I
D = 250 mA
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mAVGS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mA
I
GSS
Gate-Body Leakage (OM6103)
± 500
nA
V
GS = ± 12.8 V
I
GSS
Gate-Body Leakage (OM6104)
± 500
nA
V
GS = ± 12.8 V
I
GSS
Gate-Body Leakage (OM6003)
± 100
nA
V
GS = ± 20 V
I
GSS
Gate-Body Leakage (OM6004)
± 100
nA
V
GS = ± 20 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS = Max. Rat., VGS = 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS = Max. Rat., VGS = 0
Current
0.2
1.0
mA
V
DS = 0.8 Max. Rat., VGS = 0,
Current
0.2
1.0
mA
V
DS = 0.8 Max. Rat., VGS = 0,
T
C = 125° C
T
C = 125° C
I
D(on)
On-State Drain Current1
5.5
A
V
DS
2 V
DS(on), VGS = 10 V
I
D(on)
On-State Drain Current1
4.5
A
V
DS
2 V
DS(on), VGS = 10 V
V
DS(on)
Static Drain-Source On-State
2.4
3.15
V
V
GS = 10 V, ID = 3.0 A
V
DS(on)
Static Drain-Source On-State
3.25
4.00
V
V
GS = 10 V, ID = 2.5 A
Voltage1
Voltage1
R
DS(on)
Static Drain-Source On-State
1.05
V
GS = 10 V, ID = 3.0 A
R
DS(on)
Static Drain-Source On-State
1.6
V
GS = 10 V, ID = 2.5 A
Resistance1
Resistance1
R
DS(on)
Static Drain-Source On-State
2.0
V
GS = 10 V, ID = 3.0 A,
R
DS(on)
Static Drain-Source On-State
2.9
3.3
V
GS = 10 V, ID = 2.5 A,
Resistance1
T
C = 125 C
Resistance1
T
C = 125 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance1
3.0
3.6
S(W )
V
DS
2 V
DS(on), ID = 3.0 A
g
fs
Forward Transductance1
2.5
2.8
S(W )
V
DS
2 V
DS(on), ID = 2.5 A
C
iss
Input Capacitance
700
pF
V
GS = 0
C
iss
Input Capacitance
700
pF
V
GS = 0
C
oss
Output Capacitance
70
pF
V
DS = 25 V
C
oss
Output Capacitance
90
pF
V
DS = 25 V
C
rss
Reverse Transfer Capacitance
20
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
30
pF
f = 1 MHz
t
d(on)
Turn-On Delay Time
18
ns
V
DD = 175 V, ID @ 3.0 A
t
d(on)
Turn-On Delay Time
18
ns
V
DD = 225 V, ID @ 2.5 A
t
r
Rise Time
20
ns
R
g = 10 W ,VGS = 10 V
t
r
Rise Time
20
ns
R
g = 7.5 W , VGS = 10 V
t
d(off)
Turn-Off Delay Time
40
ns
t
d(off)
Turn-Off Delay Time
42
ns
t
f
Fall Time
25
ns
t
f
Fall Time
25
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 5.5
A
Modified MOSPOWER
I
S
Continuous Source Current
- 4.5
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current1
- 22
A
the integral P-N
I
SM
Source Current1
- 18
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage1
- 1.6
V
T
C = 25 C, IS = -5.5 A, VGS = 0
V
SD
Diode Forward Voltage1
- 1.4
V
T
C = 25 C, IS = -4.5 A, VGS = 0
V
SD
Diode Forward Voltage1
- 2.5
V
T
C = 25 C, IS = -4.5 A, VGS = 0
V
SD
Diode Forward Voltage1
- 2
V
T
C = 25 C, IS = -4 A, VGS = 0
t
rr
Reverse Recovery Time
470
ns
T
J = 150 C, IF = IS,trr
Reverse Recovery Time
430
ns
T
J = 150 C, IF = IS,
dl
F/ds = 100 A/ms
dl
F/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle
2%.
G
D
S
G
D
S



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