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Document Number 85685

Rev. 1.3, 12-Dec-05

SD106WS

Vishay Semiconductors

Electrical Characteristics

Typical Characteristics (Tamb = 25

°C unless otherwise specified)

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Reverse breakdown voltage

30

V

Leakage current

5.0

µA

Forward voltage

260

mW

320

mW

420

mW

490

550

mW

Diode capacitance

15

pF

Figure 1. Forward Current vs. Forward Voltage

Figure 2. Typical Variation of Reverse Current at Various

Temperatures

18501

1000

100

10

1

0.1

0.01

00.2 0.3

0.4

0.5

0.6 0.7 0.8

0.1

= 125 °C

40 °C

25 °C

18502

= 125 °C

100 °C

75 °C

50 °C

25 °C

1000

100

10

1

0.1

0.01

10

15

05

25

30

20

18503

45

40

35

30

25

20

15

10

5

0

04

8

12

16

20

24

28