T2322 T2323 Series

2

Motorola Thyristor Device Data

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

3.5

°C/W

Thermal Resistance, Junction to Ambient

R

θJA

60

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Blocking Current

(VD = Rated VDRM, Gate Open)

TJ = 25°C

TJ = 100°C

IDRM

—

—

—

0.2

10

0.75

µA

mA

Peak On-State Voltage*

(ITM = 10 A)

T2323 Series

T2322 Series

VTM

—

—

1.7

1.7

2.6

2.2

Volts

Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 30 Ω)

All Modes

T2322 Series

MT2(+), G(+); MT2(–), G(–)

T2323 Series

MT2(+), G(–); MT2(–),I G(+)

T2323 Series

IGT

—

—

—

—

—

—

10

25

40

mA

Gate Trigger Voltage (Continuous dc)

(VD = 12 Vdc, RL = 30 Ω, TC = 25°C)

(VD = VDRM, RL = 125 Ω, TC = 100°C)

VGT

—

0.15

1

—

2.2

—

Volts

Holding Current

(VD = 12 V, ITM = 150 mA, Gate Open)

IH

—

15

30

mA

Gate Controlled Turn-On Time

(VD = Rated VDRM, ITM = 10 A pk, IG = 60 mA)

tgt

—

1.8

2.5

µs

Critical Rate-of-Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform, TC = 100°C)

dv/dt

10

100

—

V/

µs

Critical Rate-of-Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 3.5 A pk, Commutating

di/dt = 1.26 A/ms, Gate Unenergized, TC = 90°C)

dv/dt(c)

1

4

—

V/

µs

*Pulse Test: Pulse Width

p 300 µs, Duty Cycle p 2%.