90

Central

Semiconductor Corp.

TM

BAW101

DUAL, ISOLATED HIGH VOLTAGE

SWITCHING DIODES

SOT-143 CASE

DESCRIPTION

The CENTRAL SEMICONDUCTOR BAW101

type is a Silicon Dual Isolated High Voltage

Switching diode designed for surface mount

switching applications requiring high voltage

capabilities.

Marking Code is CJP.

MAXIMUM RATINGS (TA=25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

300

V

Peak Repetitive Reverse Voltage

VRRM

300

V

Continuous Forward Current

IF

200

mA

Peak Repetitive Forward Current

IFRM

500

mA

Forward Surge Current, tp=1

IFSM

4500

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

357

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IR

VR=250V

150

nA

IR

VR=250V, TA=150°C

50

BVR

300

V

VF

IF=100mA

0.9

1.3

V

CT

VR=0V, f=1.0MHz

5.0

pF

trr

50

ns

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