2SC3835 datasheet(1/1 Pages) SANKEN

Part #	2SC3835

Description	Silicon NPN Triple Diffused Planar Transistor

PDF	1 Pages

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Manufacturer	SANKEN [Sanken electric]

Direct Link	http://www.sanken-ele.co.jp/en

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76

Silicon NPN Triple Diffused Planar Transistor (Switching Transistor)

Application : Humidifier, DC-DC Converter, and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Ratings

200

120

8

7(Pulse14)

3

70(Tc=25°C)

150

–55 to +150

Unit

V

A

W

°C

sAbsolute maximum ratings

sElectrical Characteristics

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

Ratings

100max

120min

70 to 220

0.5max

1.2max

30typ

110typ

Unit

µA

V

MHz

pF

Conditions

VCB=200V

VEB=8V

IC=50mA

VCE=4V, IC=3A

IC=3A, IB=0.3A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC3835

(Ta=25°C)

I C– V CE Characteristics (Typical)

h FE– I C Characteristics (Typical)

h FE– I C Temperature Characteristics (Typical)

θj-a–t Characteristics

I C– V BE Temperature Characteristics (Typical)

V CE(sat) – I B Characteristics (Typical)

Pc – T a Derating

0

2

2.6

1

0.005 0.01

0.1

0.05

1

0.5

Base Current I B(A)

0.02

0.1

0.5

1

7

5

20

50

100

200

Collector Current I C(A)

(V CE=4V)

Safe Operating Area (Single Pulse)

f T– I E Characteristics (Typical)

Typ

–0.01

–0.1

–1

–0.05

–0.5

–5

20

10

0

30

(V CE=12V)

Emitter Current I E(A)

10

120

50

5

200

0.05

1

0.5

0.1

20

10

5

Collector-Emitter Voltage V CE(V)

Without Heatsink

Natural Cooling

100

µs

0

1

2

3

4

5

6

7

2

13

4

Collector-Emitter Voltage V CE(V)

60mA

40mA

20mA

100mA

150mA

200mA

I B=10mA

0.4

0.5

1

5

1

1 0

100

1000 2000

Time t(ms)

0

7

2

3

4

5

6

1

0

1.1

1.0

0.5

Base-Emittor Voltage V BE(V)

(V CE=4V)

0.01

0.05

0.1

0.5

1

5 7

20

50

300

100

Collector Current I C(A)

25˚C

–30˚C

125˚C

70

60

50

40

30

20

10

3.5

0

2 5

5 0

7 5

100

125

150

Ambient Temperature Ta(˚C)

Without Heatsink

sTypical Switching Characteristics (Common Emitter)

VCC

(V)

50

RL

(

Ω)

16.7

IC

(A)

3

VBB2

(V)

–5

IB2

(A)

–0.6

ton

(

µs)

0.5max

tstg

(

µs)

3.0max

tf

(

µs)

0.5max

IB1

(A)

0.3

VBB1

(V)

10

External Dimensions MT-100(TO3P)

15.6±0.4

9.6

ø3.2±0.1

2

3

1.05

+0.2

-0.1

BE

5.45±0.1

C

4.8±0.2

0.65

+0.2

-0.1

1.4

2.0±0.1

a

b

Weight : Approx 6.0g

a. Part No.

b. Lot No.

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