2SC4140 datasheet(1/1 Pages) SANKEN

Part #	2SC4140

Description	Silicon NPN Triple Diffused Planar Transistor

PDF	1 Pages

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Manufacturer	SANKEN [Sanken electric]

Direct Link	http://www.sanken-ele.co.jp/en

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Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)

Application : Switching Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Ratings

500

400

10

18(Pulse36)

6

130(Tc=25°C)

150

–55 to +150

Unit

V

A

W

°C

sAbsolute maximum ratings

sElectrical Characteristics

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

Ratings

100max

400min

10 to 30

0.5max

1.3max

10typ

165typ

Unit

µA

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=10A

IC=10A, IB=2A

VCE=12V, IE=–2.0A

VCB=10V, f=1MHz

2SC4140

(Ta=25°C)

I C– V CE Characteristics (Typical)

h FE– I C Characteristics (Typical)

t on•t stg•t f– I C Characteristics (Typical)

θj-a–t Characteristics

I C– V BE Temperature Characteristics (Typical)

VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)

Pc – T a Derating

Reverse Bias Safe Operating Area

Safe Operating Area (Single Pulse)

0

8

4

12

16

18

2

13

4

Collector-Emitter Voltage V CE(V)

800mA

1.2A

600mA

400mA

200mA

1.6A

I B=100mA

0.02

0.1

0.05

1

5

10

18

0.5

0

1

1.4

(I C/I B=5)

Collector Current I C(A)

V BE(sat)

125˚C

(Case

Temp)

25˚C (Case

Temp)

–55˚C (Case

Temp)

–55˚C

V CE(sat)

12

5˚

C

1

0.2

0.5

10

18

5

0.1

0.5

5

10

1

Collector Current I C(A)

t stg

t on

t f

V CC

200V

I C:I B1:–I B2=10:1:2

0.1

1

2

0.5

1

1 0

100

1000

Time t(ms)

130

100

50

3.5

0

Ambient Temperature Ta(˚C)

Without Heatsink

0

2 5

5 0

7 5

100

125

150

10

50

5

500

100

1

0.5

0.03

0.1

0.05

10

50

5

Collector-Emitter Voltage V CE(V)

Without Heatsink

Natural Cooling

L=3mH

IB2=–0.5A

Duty:less than 1%

10

50

5

100

500

0.05

0.03

5

1

0.5

0.1

10

50

Collector-Emitter Voltage V CE(V)

Without Heatsink

Natural Cooling

100

µ

s

10ms

1ms

DC

0.02

0.1

0.05

1

1 8

10

5

0.5

5

10

50

Collector Current I C(A)

(V CE=4V)

125˚C

25˚C

–55˚C

0

18

8

4

16

12

0

1.2

0.4

0.6

0.8

1.0

0.2

Base-Emittor Voltage V BE(V)

(V CE=4V)

sTypical Switching Characteristics (Common Emitter)

VCC

(V)

200

RL

(

Ω)

20

IC

(A)

10

VBB2

(V)

–5

IB2

(A)

–2

ton

(

µs)

1max

tstg

(

µs)

3max

tf

(

µs)

0.5max

IB1

(A)

1

VBB1

(V)

10

External Dimensions MT-100(TO3P)

15.6±0.4

9.6

ø3.2±0.1

2

3

1.05

+0.2

-0.1

BE

5.45±0.1

C

4.8±0.2

0.65

+0.2

-0.1

1.4

2.0±0.1

a

b

Weight : Approx 6.0g

a. Part No.

b. Lot No.

93

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