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CPD30V Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CPD30V Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() PROCESS CPD30V Dual Switching Diode Dual, Common Cathode, High Speed Switching Diode Chip GEOMETRY PROCESS DETAILS PRINCIPAL DEVICE TYPE CMLD2838 GROSS DIE PER 4 INCH WAFER 46,200 Die Size 15.4 x 15.4 MILS Die Thickness 7.1 MILS Anode 1 Bonding Pad Area 5.9 x 5.9 x 8.3 MILS Anode 2 Bonding Pad Area 5.9 x 5.9 x 8.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 10,000Å BACKSIDE COMMON CATHODE R0 www.centr a lsemi.com R2 (6-October 2011) |
Similar Part No. - CPD30V |
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Similar Description - CPD30V |
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