10A, 60V

Schottky Rectifier Die

CPD31X

CPD34X

Features:

• Low forward voltage at 10 Amps forward current

• Low reverse leakage current

• Low profile geometry

• Metalization suitable for standard die attached technologies

• Top metalization optimized for solder process (CPD31X)

• Top metalization optimized for wire bonding (CPD34X)

Maximum Ratings (TA = 25˚C)

Electrical Characteristics (TA = 25˚C unless otherwise noted)

VRRM

(V)

MAX

VR

(V)

MAX

IO

(A)

MAX

IFSM

(A)

MAX

TJ, Tstg

(˚C)

MAX

BVR

(V)

MIN

VF

@ IF

(V)

(V)

(A)

TYP

MAX

IR

@ VR

(V)

TYP

MAX

MAX

60

60

10

250

-65 to +150

60

0.49

0.59

–

0.67

5.0

10

75μA

–

500μA

*50mA

60

*60

• Energy efficiency

• High temperature characterization

• Space savings

Benefits:

Applications:

• Optimized for use as a by-pass rectifier in low profile

solar (PV) panels

• Reverse polarity protection

• OR-ing diode

To order samples contact:

Central’s Sales department

631-435-1110

To order the latest Chip databook, visit:

web.centralsemi.com/search/sample.php

Die Size

85 MILS x 85 MILS

Die Thickness

5.9 MILS ±0.8 MILS

Die Passivation

SiN

Anode Bonding Pad Area

78 MILS x 78 MILS

Top Side Metalization (CPD31X)

Al/Ni/Au - 30,000

Å/4,000Å/1,500Å

Top Side Metalization (CPD34X)

Al - 30,000

Å

Back Side Metalization

Ti/Ni/Au - 1,600

Å/5,550Å/1,500Å

Scribe Alley Width

3.15 MILS

Wafer Diameter

5 INCHES

Gross Die Per Wafer

2,260

*TA=100˚C

Typical Electrical Characteristics

Samples

Literature

145 Adams Avenue

CPD31X

CPD34X

Product Brief

Product Brief