MECHANICAL SPECIFICATIONS:

Die Size

98 x 98 MILS

Die Thickness

13.8 MILS ± 0.8 MILS

Die Passivation

SiN / SiO2 / PI

Anode Bonding Pad Area

75 x 75 MILS

Top Side Metalization

Al – 40,000Å

Back Side Metalization

Ti/W/Au – 200Å/1,000Å/1,000Å

Wafer Diameter

4 INCHES

Gross Die Per Wafer

1,100

The CPC01 Silicon Carbide Schottky die is optimized for high temperature applications.

Parametrically, the device is energy efficient as a result of low total conduction losses and

minimal changes to switching characteristics as a function of temperature.

FEATURES:

• Positive temperature coefficient

• Low reverse leakage current

• Temperature independent switching characteristics

• High operating junction temperature

• Metalization suitable for standard die attach technologies

• Top metalization optimized for wire bonding

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

1200

V

DC Blocking Voltage

VR

1200

V

Continuous Forward Current

IF

10

A

Peak Forward Surge Current (tp=8.3ms)

IFSM

50

A

Operating and Storage Junction Temperature

TJ, Tstg

-55 to +225

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

TYP

MAX

UNITS

IR

VR=1200V

60

400

μA

IR

VR=1200V, TJ=175°C

0.09

1.0

mA

VF

IF=10A

1.55

1.8

V

VF

IF=10A, TJ=175°C

2.3

3.0

V

QC

VR=800V, IF=10A, di/dt=750A/μs

54

nC

CJ

VR=1.0V, f=1.0MHz

477

pF

CJ

VR=300V, f=1.0MHz

50

pF

CJ

VR=600V, f=1.0MHz

41

pF

CPC01

Silicon Carbide Schottky Rectifier Die

10 Amp, 1200 Volt

APPLICATIONS:

• Power inverters

• Industrial motor drives

• Switch-mode power supplies

• Power factor correction

• Over-current protection

www.centr a lsemi.com

R0 (20-March 2013)

www.centr a lsemi.

com