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SCS220AE

SiC Schottky Barrier Diode

3) High-speed switching possible

lOutline

lInner circuit

lPackaging specifications

TO-247

2) Reduced temperature dependence

650V

20A

lFeatures

31nC

1) Shorter recovery time

A

W

Symbol

lConstruction

Silicon carbide epitaxial planer Shottoky Diode

Parameter

V

V

A

Tube

-

Type

Packaging

Reel size (mm)

C

SCS220AE

Basic ordering unit (pcs)

Tape width (mm)

-

30

Marking

Taping code

130*

6

71*

2

A

A

650

20*

1

76*

5

260*

3

A

Total power disspation

Junction temperature

Reverse voltage (DC)

Continuous forward current

56*

4

°C

°C

175

-55 to +175

Range of storage temperature

lAbsolute maximum ratings (T

Surge no repetitive forward current

Reverse voltage (repetitive peak)

Unit

Value

Repetitive peak forward current

650

(1) N/C

(2) Cathode

(3) Anode

(1)

(3)

(2)

(1) (2)

(3)

1/5

2014.01 - Rev.A