1

Motorola Bipolar Power Transistor Device Data

Complementary Silicon Power

Transistors

. . . designed for general–purpose switching and amplifier applications.

• DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc

• Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc

• Excellent Safe Operating Area

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

60

Vdc

Collector–Emitter Voltage

VCER

70

Vdc

Collector–Base Voltage

VCB

100

Vdc

Emitter–Base Voltage

VEB

7.0

Vdc

Collector Current — Continuous

IC

1 5

Adc

Base Current

IB

7.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

90

0.72

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.39

_C/W

Thermal Resistance, Junction to Ambient

R

θJA

35.7

_C/W

TIP3055

TIP2955

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.1

100

1000

10

1.0

2.0

0.3

7.0

10

VCE = 4.0 V

TJ = 25°C

0.2

0.5 0.7

3.0

5.0

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by TIP3055/D

TIP3055

TIP2955

15 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60 VOLTS

90 WATTS

NPN

PNP

CASE 340D–01