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SC250 Datasheet(PDF) 1 Page - Digitron Semiconductors

Part # SC250
Description  BIDIRECTIONAL TRIODE THYRISTOR
PDF  4 Pages
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Manufacturer  DIGITRON [Digitron Semiconductors]
Direct Link  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

SC250 Datasheet(HTML) 1 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130213
SC250, SC251, SC250()3 SERIES
BIDIRECTIONAL TRIODE THYRISTOR
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage
SC250B, SC251B, S250B3
SC250D, SC251D, S250D3
SC250E, SC251E, S250E3
SC250M, SC251M, S250M3
VDRM
200
400
500
600
Volts
Forward on-state current RMS
IT(RMS)
15
Amps
Peak forward surge current
(one cycle, sine wave, 60Hz)
ITSM
100
Amps
Circuit fusing considerations
(t = 1ms)
(t = 8.3ms)
I2t
20
41.5
A2s
Peak gate power
PGM
10
Watts
Average gate power
PG(AV)
0.5
Watts
Peak gate power (pulse width = 10µs)
IGM
2
Amps
Operating junction temperature range
TJ
-40 to +115
°C
Storage temperature range
Tstg
-40 to +125
°C
Stud torque
30
In. lb.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum
Unit
Thermal resistance, junction to case
SC250, SC251
SC250()3
R
ӨJC
2.0
2.3
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted. Values apply for either polarity of MT2. Characteristics referenced to MT1.)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Peak forward blocking current
(VD = rated VDRM, gate open)
TC = 25°C
TC = 115°C
IDRM
-
-
-
-
0.1
0.5
mA
Peak on-state voltage
(ITM = 21A peak, pulse width = 1ms, duty cycle ≤ 2%)
VT
-
-
1.65
Volts
Critical rate of rise of off-state voltage
(Rated VDRM, gate open, exponential waveform, TC = 115°C)
dv/dt
100
-
-
V/µs
Critical rate of rise of commutating off-state voltage (1)
(IT(RMS) = Rated RMS on state current, VD = VDRM, gate open,
commutating di/dt = 8A/ms)
SC250, SC251: TC = 84°C
SC250()3: TC = 78°C
dv/dt(c)
4
4
-
-
-
-
V/µs
Gate trigger current
(VD = 12V)
MT2(+), G(+); MT2(-), G(-); RL = 100Ω)
MT2(+), G(-);RL = 50Ω)
IGT
-
-
-
-
50
50
mA
Gate trigger current
(VD = 12V, TC = -40°C)
MT2(+), G(+); MT2(-), G(-); RL = 50Ω)
MT2(+), G(-);RL = 25Ω)
IGT
-
-
-
-
80
80
mA


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