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ELMOS Semiconductor AG

Data Sheet

QM-No.: 25DS0090E.00

PRELIMINARY INFORMATION - JUL 28, 2011

This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.

DUAL CHANNEL PIR SIGNAL PROCESSOR

E910.62

Electrical Characteristics_______________________________________

Absolute Maximum Ratings

Parameter

Symbol Min

Max

Unit

Remarks

Supply Voltage

-0.3

3.6

V

Current into any pin

-100

100

mA

One pin at a time

Storage Temperature

-45

125

°

C

Stresses beyond those listed above may cause permanent damage to the device. Exposure to absolute maximum ratings may affect

the device reliability.

ESD protection: all pins will be able to withstand a discharge of a 100pF capacitor charged to 1.6kV through a 1500Ω series resistor.

Test method: MIL-STD-883D method 3015.

Operating temperature range: -25 to +70°C

Parameter

Symbol Min

Typ

Max

Unit

Remarks

Supply

Supply voltage

2.7

3.3

3.6

V

Supply current

13.5

18

µA

Digital DOCI interface

Input low voltage

20

Input high voltage

80

Pull down current

200

µA

Pull up current

130

µA

Input capacitance

5

pF

Data setup time

2

Data clock low time

200

ns

Data clock high time

200

ns

Data bit settling time

1

µs

Serial Interface update time

512

Analog Inputs PIR+, PIR-, Analog to Digital Converter

Input leakage

-1

1

fA

+10mV

-50

50

mV

Differential

PIRIN input voltage range

-100

100

mV

Common Mode

ADC Resolution

14

Bits

Max Count = 2^14-1

ADC Sensitivity

6

6.5

7.1

µV/count

ADC Temperature Coefficient

-300

300

ppm/K

2.5

µV

@ 0.5Hz

1.5

µV

@ 1Hz

0.5

µV

@ 2Hz

RMS output noise referred to

input

0.4

µV

@ 5Hz

ADC Offset

7000

8192

9200

counts

Digital Filter Type & Cut off Freq.

Hz

Digital Filter Sampling Freq.

1/32

DOCI Interrupt cycle

512