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MRF559 Datasheet(PDF) 1 Page - Advanced Power Technology |
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MRF559 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 5 page ![]() Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF559 MRF559G Rev A 9/2005 * G Denotes RoHS Complaint, Pb Free Terminal Finish DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °C) Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 16 Vdc VCBO Collector-Base Voltage 30 Vdc VEBO Emitter-Base Voltage 3.0 Vdc IC Collector Current 150 mA Thermal Data P D Total Device Dissipation @ TC = 75ºC Derate above 75ºC 2.0 20 Watts mW/ ºC Tstg Storage Temperature Range -65 to +150 ºC Macro X Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficiency 50% • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Solderability RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
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