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MFE121 Datasheet(PDF) 2 Page - Digitron Semiconductors |
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MFE121 Datasheet(HTML) 2 Page - Digitron Semiconductors |
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2 / 4 page  DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 MFE120–MFE122 DUAL GATE MOSFET VHF AMPLIFIER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Common Source Power Gain (VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 6.0mAdc, ZS is optimized for NF) (f = 105MHz, Figure 1) (f = 60MHz, figure 3) (f = 200MHz, figure 3) MFE120 MFE121 MFE121 Gps 17 20 17 19.6 27.8 18.6 - - - dB Level of Unwanted Signal for 1.0% Cross Modulation (VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 6.0mAdc) - - 100 - mV Common Source Conversion Power Gain (gate 1 Injection, figure 2) (VDS = 15 Vdc, VG2S = 4.0 Vdc, local oscillator voltage = 925mVrms (Signal Frequency = 60MHz, local oscillator frequency = 104MHz) (Signal Frequency = 200MHz, local oscillator frequency = 244MHz) MFE122 MFE122 GC 15 12 16.5 13.3 - - dB sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20121114 |
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