IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTQ480P2

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

30

48

S

C

iss

6800

pF

C

oss

V

GS

= 0V, V

680

pF

C

rss

44

pF

t

d(on)

22

ns

t

r

11

ns

t

d(off)

40

ns

t

f

8

ns

Q

g(on)

108

nC

Q

gs

V

37

nC

Q

gd

38

nC

R

thJC

0.13

°C/W

R

thCS

0.25

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

52

A

I

SM

Repetitive, Pulse Width Limited by T

JM

204

A

V

SD

I

1.5

V

t

rr

400

ns

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

I

V

Resistive Switching Times

V

R

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

TO-3P (IXTQ) Outline

Pins: 1 - Gate

2 - Drain

3 - Source 4 - Drain